High Power Bias Tee 500 MHz - 6 GHz with 100W Capability
Bias Tees enable the integration of DC power with RF signal paths while maintaining signal integrity in demanding microwave applications. This high power Bias Tee operates from 500 MHz to 6 GHz with 100W input power handling, designed for applications where robust power injection and low RF loss are critical requirements. The component delivers exceptional electrical performance across the full frequency range with SMA-female connectors.
Technical Specifications
- Frequency Range: 500 MHz to 6 GHz
- Input Power Handling: 100W CW maximum
- Insertion Loss: 0.75 dB maximum
- VSWR: 1.3:1 maximum
- DC/RF Isolation: 50 dB minimum
- DC Current Rating: 7A maximum at 250V maximum
- Connector Type: SMA-female
Application Areas
- 5G/6G & Telecommunications: Testing and prototype development for next-generation wireless systems requiring DC bias in amplifier chains
- SATCOM: Ground stations and mobile satellite terminals where low insertion loss and high power handling are essential
- Defense & Aerospace: Military RF subsystems, active antenna arrays, and phased array systems
- Test & Measurement: Laboratory characterization benches and measurement setups for LNA and HPA components
The combination of wide bandwidth coverage, high power capability, and excellent DC/RF isolation makes this Bias Tee suitable for integrating active components in demanding environments. The low insertion loss of 0.75 dB maximum and tight VSWR ensure minimal system performance degradation across the entire 500 MHz to 6 GHz band.
European distributor bq-microwave provides engineering support for system designers requiring customized specifications or detailed performance documentation. Contact our technical team to discuss specific requirements for your RF application.