Wenteq ABP0250-02-5037 Power Amplifier 50–2500 MHz
Wenteq has introduced the ABP0250-02-5037, a three-stage GaN-transistor-based power amplifier module designed for broadband RF and microwave applications. This compact amplifier delivers 5W output power across 50–2500 MHz, combining high gain with robust thermal performance for demanding commercial and industrial systems.
The module leverages GaN semiconductor architecture to achieve efficient operation and consistent amplification across a wide frequency spectrum, making it suitable for multi-band RF systems and test platforms requiring reliable signal conditioning.
Technical Specifications
- Frequency Range: 50–2500 MHz
- Output Power: 5W (+37 dBm)
- Gain: 50 dB
- 1dB Compression Point: 4 dB
- Supply Voltage: +28V
- Connector Type: SMA-female
- Semiconductor Technology: GaN transistor
- Stage Configuration: Three-stage design
Application Areas
- 5G & Telecommunications: Test platforms for next-generation wireless systems and multi-band infrastructure
- SATCOM: Ground station uplink modules requiring linear amplification
- Defense & Aerospace: RF subsystems for broadband signal conditioning
- Test & Measurement: Laboratory and production systems requiring wide-band coverage and signal integrity
The ABP0250-02-5037 combines substantial gain with +37 dBm output capability, delivering the power density required by systems where linearity and thermal efficiency are critical. The GaN-based architecture ensures extended operational lifetime and reduced cooling requirements in integrated designs.
bq-microwave, as European distributor of RF and mmWave components, offers amplifier solutions from Wenteq and other manufacturers across coaxial and waveguide formats. For technical specifications, availability, and integration support, contact bq-microwave directly via info@bq-microwave.de.